Mfg Part Number: 1372FW1051-001
Alternate P/N: 1372FW1051001
NSN : 5962-01-372-6879
NIIN : 013726879
CAGE Code : 72314
Item Name : Microcircuit Memory
If you’re in need of NSN parts, Purchasing Synergy is the ultimate source. As an ASAP Semiconductor company, we have access to a vast and diverse inventory of parts and components like 1372FW1051-001 for the aerospace, civil aviation, defense, electronics, and industrial markets. This includes parts such as Microcircuit Memory from Bae Systems Information And Electronic Systems Integration I with Cage Code 72314 as well as part numbers like 1372FW1051-001 and FSC 5962 Microcircuits Electronic with013726879. Purchasing Synergy has more than two billion new and obsolete parts readily available with short lead times and competitive prices and, as we are an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a No China Sourcing Pledge, each part we sell is fully traceable or comes directly from the manufacturer.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-372-6879 Item Description: Microcircuit Memory | 5962 | 013726879 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1372fw1051-001 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 280 INCHES MAXIMUM |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY600 GATE EPLD |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDWCLOCK AND 3-STATE OUTPUT AND WENABLE AND WDISABLE AND ASYNCHRONOUS AND BIDIRECTIONAL AND ERASABLE AND PROGRAMMED |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC60 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING650 0 MILLIWATTS |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PICOFARADS MAXIMUM AND 20 00 OUTPUT PICOFARADS MAXIMUM |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
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