Mfg Part Number: 1372FW1061-002
Alternate P/N: 1372FW1061002
NSN : 5962-01-373-2813
NIIN : 013732813
CAGE Code : 72314
Item Name : Microcircuit Memory
If you’re in need of NSN parts, Purchasing Synergy is the ultimate source. As an ASAP Semiconductor company, we have access to a vast and diverse inventory of parts and components like 1372FW1061-002 for the aerospace, civil aviation, defense, electronics, and industrial markets. This includes parts such as Microcircuit Memory from Bae Systems Information And Electronic Systems Integration I with Cage Code 72314 as well as part numbers like 1372FW1061-002 and FSC 5962 Microcircuits Electronic with013732813. Purchasing Synergy has more than two billion new and obsolete parts readily available with short lead times and competitive prices and, as we are an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a No China Sourcing Pledge, each part we sell is fully traceable or comes directly from the manufacturer.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-373-2813 Item Description: Microcircuit Memory | 5962 | 013732813 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1372fw1061-002 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC45 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSITIVE ALTERED ITEMMAKE FROM PN 5962-8752901LAPROGRAMMED PER 1062-U56 P82FD137200061-001CHECKSUM F4B0 NHA PN 1372AE1062 |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROGRAMMED |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC6 00 INPUT PICOFARADS MAXIMUM AND 8 00 OUTPUT PICOFARADS MAXIMUM |
MEMORY | ADAQ | BODY LENGTH1 260 INCHES MINIMUM AND 1 280 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND ULTRAVIOLET ERASABLE AND COMPATIBLE CMOS AND PROGRAMMED AND TESTED TO MIL-STD-883 |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES MAXIMUM SUPPLY |
MEMORY | ADAU | BODY HEIGHT0 180 INCHES MINIMUM AND 0 200 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONEO LOROPS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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