Mfg Part Number: 6011258-001
Alternate P/N: 6011258001
NSN : 5962-01-211-4664
NIIN : 012114664
CAGE Code : 12436
Item Name : Microcircuit Memory
If you’re in need of NSN parts, Purchasing Synergy is the ultimate source. As an ASAP Semiconductor company, we have access to a vast and diverse inventory of parts and components like 6011258-001 for the aerospace, civil aviation, defense, electronics, and industrial markets. This includes parts such as Microcircuit Memory from Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems with Cage Code 12436 as well as part numbers like 6011258-001 and FSC 5962 Microcircuits Electronic with012114664. Purchasing Synergy has more than two billion new and obsolete parts readily available with short lead times and competitive prices and, as we are an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a No China Sourcing Pledge, each part we sell is fully traceable or comes directly from the manufacturer.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-211-4664 Item Description: Microcircuit Memory | 5962 | 012114664 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
6011258-001 | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 000 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 310 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 098 INCHES NOMINAL |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONAIRCRAFT F-16AIRCRAFT GALAXY C-5 SUPPORT EQUIPMENT B-1 AIRCRAFT BALLISTIC MISSILE EARLY WARNING STS BMEWS PAVE PHASED ARRAY WARNING SYSTEM PAWS AIRCRAFT STRATOLIFTER C-135 OVER THE HORIZON BACK SCANNER OTH-B PROGRAM ANFPS- |
MEMORY | CBBL | FEATURES PROVIDEDHIGH PERFORMANCE AND STATIC OPERATION AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN18 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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