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Part 5805171P11 By Bae Systems Information And Electronic Systems Integration Inc - Request for Quote Today !

Mfg Part Number: 5805171P11

NSN : 5962-01-214-0932

NIIN : 012140932

CAGE Code : 94117

Manufacturer: Bae Systems Information And Electronic Systems Integration Inc

Item Name : Microcircuit Memory

FSC : FSC 5962 Microcircuits Electronic

If you’re in need of NSN parts, Purchasing Synergy is the ultimate source. As an ASAP Semiconductor company, we have access to a vast and diverse inventory of parts and components like 5805171P11 for the aerospace, civil aviation, defense, electronics, and industrial markets. This includes parts such as Microcircuit Memory from Bae Systems Information And Electronic Systems Integration Inc with Cage Code 94117 as well as part numbers like 5805171P11 and FSC 5962 Microcircuits Electronic with012140932. Purchasing Synergy has more than two billion new and obsolete parts readily available with short lead times and competitive prices and, as we are an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a No China Sourcing Pledge, each part we sell is fully traceable or comes directly from the manufacturer.

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NSN Information for Part Number 5805171P11 with NSN 5962-01-214-0932, 5962012140932

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-214-0932 Item Description: Microcircuit Memory	5962	012140932	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
5805171p11	2	2	3

Characteristics Data of NSN 5962-01-214-0932, 5962012140932

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 840 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONRECEIVING SETCOUNTERMEASURES ANSLR-16A
MEMORY	CBBL	FEATURES PROVIDEDPROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN6 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

580 0 002	580 0 002 REV A ITEM NO 13	580-00	580-000-504
580 000002 000	580-000002-001	580 000031 000	580-000034-000
580-000034-001	580-000039-000	580-000039-001	580-000040-003
580-000041-001	580-000062-000	580-000084-000	580-0003
580-0003	580-0003	580-0007-00	580-001
580-0010-00	580-0011-000	580-0016	580-0016-1568
580-0016-1568	580-0016-1568	580-0019-1075	580-0021-00
580-003	580-003	580-0043-00	580-0052-02