Mfg Part Number: V510-00018-1
Alternate P/N: V510000181
NSN : 5962-01-241-3168
NIIN : 012413168
CAGE Code : 82577
Manufacturer: Raytheon Company
Item Name : Microcircuit Memory
If you’re in need of NSN parts, Purchasing Synergy is the ultimate source. As an ASAP Semiconductor company, we have access to a vast and diverse inventory of parts and components like V510-00018-1 for the aerospace, civil aviation, defense, electronics, and industrial markets. This includes parts such as Microcircuit Memory from Raytheon Company with Cage Code 82577 as well as part numbers like V510-00018-1 and FSC 5962 Microcircuits Electronic with012413168. Purchasing Synergy has more than two billion new and obsolete parts readily available with short lead times and competitive prices and, as we are an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a No China Sourcing Pledge, each part we sell is fully traceable or comes directly from the manufacturer.
Our website offers a range of parametric search capabilities which allow our customers to search for parts through a number like V510-00018-1 and filters, one of which is National Stock Number, or NSN. A National Stock Number is an identifier applied to any item of supply that is repeatedly procured, stocked, stored, issued, and used throughout the federal supply system. Purchasing Synergy has a broad selection of NSN parts such as 5962012413168 from manufacturers like Raytheon Company. To begin the purchasing process immediately, submit an RFQ today.
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 870 INCHES MINIMUM AND 0 920 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 280 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 160 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDWENABLE AND HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CRHL | BIT QUANTITY4096 |
MEMORY | CSWJ | WORD QUANTITY1024 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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